advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 680v fast switching characteristic r ds(on) 1.1 simple drive requirement i d 9a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg storage temperature range t j operating junction temperature range thermal data symbol parameter value units rthj-c maximum thermal resistance, junction-case 3.4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice AP2764I-A parameter rating 680 rohs-compliant product + 30 9 37 36 6 200810272 1 40 -55 to 150 -55 to 150 9 g d s g d s to-220cfm(i) a p2764 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. to-220cfm type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 680 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =4a - - 1.1 ? ,
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP2764I-A 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 10 12 14 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v v g =4.0v 10v 6.0v 0 2 4 6 8 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 4.5v 10v 5.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =4a v g =10v 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 1.2 1.6 2 2.4 2.8 3.2 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP2764I-A 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =200v 1 100 10000 1 5 9 13 17 21 25 29 33 37 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms 1s dc
package outline : to-220cfm millimeters min nom max a 4.30 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l 12.50 13.00 13.50 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code 2764i part number option a date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3 l 5
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